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1

Computational study of energy filtering effects in one-dimensional composite nano-structures

Kim, Raseong, Lundstrom, Mark S.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 2.12 MB

english, 2012

2

Influence of dimensionality on thermoelectric device performance

Kim, Raseong, Datta, Supriyo, Lundstrom, Mark S.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 570 KB

english, 2009

3

Physics of Carrier Backscattering in One- and Two-Dimensional Nanotransistors

Raseong Kim, Lundstrom, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 618 KB

english, 2009

4

On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients

Jeong, Changwook, Kim, Raseong, Luisier, Mathieu, Datta, Supriyo, Lundstrom, Mark

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 873 KB

english, 2010

5

Cooling of photoexcited carriers in graphene by internal and substrate phonons

Low, Tony, Perebeinos, Vasili, Kim, Raseong, Freitag, Marcus, Avouris, Phaedon

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 439 KB

english, 2012

6

[IEEE 2010 Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2010.06.13-2010.06.14)] 2010 Silicon Nanoelectronics Workshop - Electron-phonon scattering in planar MOSFETs with NEGF

Pal, Himadri S., Nikonov, Dmitri E., Kim, Raseong, Lundstrom, Mark S.

Year:

2010

Language:

english

File:

PDF, 410 KB

english, 2010

7

Characteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs

. Raseong Kim, M. Lundstrom

Journal:

IEEE Transactions on Nanotechnology

Year:

2008

Language:

english

File:

PDF, 677 KB

english, 2008

8

Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors

Kim, Raseong, Neophytou, Neophytos, Paul, Abhijeet, Klimeck, Gerhard, Lundstrom, Mark S.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2008

Language:

english

File:

PDF, 691 KB

english, 2008

9

Relaxation of optically excited carriers in graphene

Kim, Raseong, Perebeinos, Vasili, Avouris, Phaedon

Journal:

Physical Review B

Year:

2011

Language:

english

File:

PDF, 515 KB

english, 2011

10

Effects of Surface Orientation on the Performance of Idealized III–V Thin-Body Ballistic n-MOSFETs

Kim, Raseong, Rakshit, Titash, Kotlyar, Roza, Hasan, Sayed, Weber, Cory E.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 333 KB

english, 2011

11

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations

Avci, Uygar E., Morris, Daniel H., Hasan, Sayed, Kotlyar, Roza, Kim, Raseong, Rios, Rafael, Nikonov, Dmitri E., Young, Ian A.

Year:

2013

Language:

english

File:

PDF, 983 KB

english, 2013

12

On the best bandstructure for thermoelectric performance: A Landauer perspective

Jeong, Changwook, Kim, Raseong, Lundstrom, Mark S.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.60 MB

english, 2012

13

Computational study of the Seebeck coefficient of one-dimensional composite nano-structures

Kim, Raseong, Lundstrom, Mark S.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.28 MB

english, 2011

14

Source/Drain Doping Effects and Performance Analysis of Ballistic III-V n-MOSFETs

Kim, Raseong, Avci, Uygar E., Young, Ian A.

Journal:

IEEE Journal of the Electron Devices Society

Year:

2015

Language:

english

File:

PDF, 1.39 MB

english, 2015

15

[IEEE 2005 International Conference On Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2005.09.3-2005.09.3)] 2005 International Conference On Simulation of Semiconductor Processes and Devices - A Physics-Based TCAD Framework for the Noise Analysis of RF CMOS Circuits under the Large-Signal Operation

Sung-Min Hong,, Raseong Kim,, Hong Shick Min,, Young-June Park,, Chan Hyeong Park,

Year:

2005

Language:

english

File:

PDF, 1.78 MB

english, 2005

16

Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique

Hui Zhao,, Raseong Kim,, Paul, A., Luisier, M., Klimeck, G., Fa-Jun Ma,, Rustagi, S.C., Samudra, G.S., Singh, N., Guo-Qiang Lo,, Dim-Lee Kwong,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 291 KB

english, 2009

17

Comprehensive Performance Benchmarking of III-V and Si nMOSFETs (Gate Length = 13 nm) Considering Supply Voltage and OFF-Current

Kim, Raseong, Avci, Uygar E., Young, Ian A.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.56 MB

english, 2015

18

Ge Nanowire nMOSFET Design With Optimum Band Structure for High Ballistic Drive Current

Kim, Raseong, Avci, Uygar E., Young, Ian A.

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 825 KB

english, 2015

19

Computational Study of Geometrical Designs for Source/Drain Contacts to Reduce Parasitic Resistance in Extremely Scaled MOSFETs

Kim, Raseong, Avci, Uygar E., Young, Ian A.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 9 KB

2019

20

Comprehensive n-and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects

Kim, Raseong, Avci, Uygar E., Young, Ian A.

Journal:

IEEE Journal of the Electron Devices Society

Year:

2020

File:

PDF, 3.44 MB

2020